2N6674 & 2N6675
NPN High Power Silicon Transistor
Features
Available in JAN, JANTX, JANTXV per MIL-PRF-19500/537
TO-...
2N6674 & 2N6675
NPN High Power Silicon
Transistor
Features
Available in JAN, JANTX, JANTXV per MIL-PRF-19500/537
TO-3 (TO-204AA) Package
Rev. V1
Electrical Characteristics
Parameter Off Characteristics
Collector - Emitter Breakdown Voltage
Test Conditions
IC = 200 mAdc 2N6674 2N6675
Symbol Units Min.
V(BR)CEO Vdc
300 400
Collector - Emitter Cutoff Current
Emitter - Base Cutoff Current Collector - Base Cutoff Current On Characteristics1
Forward Current Transfer Ratio
Collector - Emitter Sustaining Voltage
Base - Emitter Saturation Voltage Dynamic Characteristics
Small-Signal Short-Circuit Forward Current Transfer Ratio
VCE = 450 Vdc, VBE = -1.5 Vdc, 2N6674 VCE = 650 Vdc, VBE = -1.5 Vdc, 2N6675
VEB = 7 Vdc VCB = 450 Vdc, 2N6674
ICEX Adc
IEBO mAdc ICBO mAdc
—
— —
IC = 1 Adc, VCE = 3 Vdc IC = 10 Adc, VCE = 2 Vdc IC = 10 Adc, IB = 2 Adc IC = 15 Adc, IB = 5 Adc
IC = 1 Adc, IB = 2 Adc
HFE VCE(SAT) Vdc VBE(SAT) Vdc
15 8
—
—
IC = 0.5 Adc, VCE = 10 Vdc, f = 1 kHz ...