2N6042

Bipolar Transistor Features:   High DC Current Gain   Collector-Emitter Sustaining Voltage: V = 100V Min   Monolithic Construction with Built-in Base-Emitter Shunt Resistors Absolute Maximum Ratings: Parameters Collector Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Collector Peak Current Base Current Total Power Dissipation upto TC = 25°C Derate above 25°C Total Power Dissipation upto T = 25°C Derate above 25°C Operating Junction Temperature Range Storage Temperature Range Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient Symbol Vceo Vcbo Vebo Ic Icm Ib Ptot Tj Tstg Rth (j-c) Rth (j-a) Unit 100V 5V 8A 16A 120mA 75W 0.6W/°C 2.2W 0.0175W/°C -65° to +150°C -65° to +150°C 1.67°C/W 57°C/W www.element14.com www.farnell.com www.newark.com Page <1> Pin Configuration: 1. Base 2. Collector 3. Emitter 4. Collector 24/01/13 V1.0 Bipolar Transistor Electrical Characteristics: (Ta = +25°C unless otherwis...