SSF1016D

SSF1016D Feathers: „ Advanced trench process technology „ avalanche energy, 100% test „ Fully characterized avalanche voltage and current ID =60A BV=100V Rdson=16mΩ (Max.) Description: The SSF1016D is a new generation of high voltage and low current N–Channel enhancement mode trench power MOSFET. This new technology increases the device reliability and electrical parameter repeatability. SSF1016D is assembled in high reliability and qualified assembly house. Application: „ Power switching application Absolute Maximum Ratings Parameter ID@Tc=25 ْC Continuous drain current,VGS@10V ID@Tc=100ْC Continuous drain current,VGS@10V IDM PD@TC=25ْC Pulsed drain current ① Power dissipation Linear derating factor VGS EAS dv/dt Gate-to-Source voltage Single pulse avalanche energy ② Peak diode recovery voltage TJ TSTG Thermal Resistance Operating Junction and Storage Temperature Range Parameter Min. RθJC RθJA Junction-to-case Junction-to-ambient — — SSF1016D ...