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SSF1030B

Silikron

MOSFET


Description
SSF1030B Feathers:  Advanced trench process technology  Ultra low Rdson, typical 25mohm  High avalanche energy, 100% test  Fully characterized avalanche voltage and current ID =7A BV=100V Rdson=25mΩ(typ.) Description: The SSF1030B is a new generation of middle voltage and high current N–Channel enhancement mode trench power MOSFET. This new technology...



Silikron

SSF1030B

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