SSF20NS60

Main Product Characteristics: VDSS RDS(on) 600V 170mΩ(typ.) ID 20A Features and Benefits: Feathers:  High dv/dt and avalanche capabilities  100% avalanche tested  Low input capacitance and gate charge  Low gate input resistance TO220 SSF20NS60 Marking and pin Assignment Schematic diagram Description: The SSF20NS60 series MOSFETs is a new technology, which combines an innovative super junction technology and advance process. this new technology achieves low Rdson, energy saving, high reliability and uniformity, superior power density and space saving. Absolute max Rating: Symbol ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C VDS VGS EAS IAR TJ TSTG Parameter Continuous Drain Current, VGS @ 10V① Continuous Drain Current, VGS @ 10V① Pulsed Drain Current② Power Dissipation③ Linear Derating Factor Drain-Source Voltage Gate-to-Source Voltage Single Pulse Avalanche Energy @ L=13.8mH Avalanche Current @ L=13.8mH Operating Junction and Storage Temperature R...