MOSFET
SSF4N60
Features
■ Extremely high dv/dt capability
■ Low Gate Charge Qg results in Simple Drive Requirement 100% aval...
Description
SSF4N60
Features
■ Extremely high dv/dt capability
■ Low Gate Charge Qg results in Simple Drive Requirement 100% avalanche tested Gate charge minimized Very low intrinsic capacitances Very good manufacturing repeatability
Vdss = 600V Id = 4A Rdson = 2.3Ω (typ.)
Description The SSF4N60 is a new generation of high voltage N–Channel enhancement mode power MOSFETs and is obtained through an extreme optimization layout design, in additional to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability, provide superior switching performance, withstand high energy pulse in the avalanche, and increases packing density.
Application ■ High current, high speed switching ■ Lighting ■ Ideal for off-line power supply, adaptor, PFC
SSF4N60 TOP View (TO220)
Absolute Maximum Ratings
Parameter
ID@Tc=25 ْC Continuous Drain Current,VGS@10V
ID@Tc=100ْC Continuous Drain Current,VGS@10V
IDM Pulsed Drain Current ①
PD@TC=2...
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