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SSF1010

Silikron

MOSFET

                                 Main Product Characteristics: VDSS 100V RDS(on) 9.5mohm(typ.) ID 100A Features and ...


Silikron

SSF1010

File Download Download SSF1010 Datasheet


Description
                                 Main Product Characteristics: VDSS 100V RDS(on) 9.5mohm(typ.) ID 100A Features and Benefits: TO220  „ Advanced trench MOSFET process technology „ Special designed for PWM, load switching and general purpose applications „ Ultra low on-resistance with low gate charge „ Fast switching and reverse body recovery „ 175℃ operating temperature SSF1010    Marking and pin Assignment  Schematic diagram        Description: It utilizes the latest trench processing techniques to achieve the high cell density and reduces the on-resistance with high repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable device for use in power switching application and a wide variety of other applications  Absolute max Rating: Symbol ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C VDS VGS EAS IAS TJ TSTG Parameter Continuous Drain Current, VGS @ 10V① Continuous Dra...




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