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MCR25N Dataheets PDF



Part Number MCR25N
Manufacturers Digitron Semiconductors
Logo Digitron Semiconductors
Description SILICON CONTROLLED RECTIFIERS
Datasheet MCR25N DatasheetMCR25N Datasheet (PDF)

DIGITRON SEMICONDUCTORS MCR25D, MCR25M, MCR25N SILICON CONTROLLED RECTIFIERS Available Non-RoHS (standard) or RoHS compliant (add PBF suffix). Available as “HR” (high reliability) screened per MIL-PRF-19500, JANTX level. Add “HR” suffix to base part number. MAXIMUM RATINGS Rating Peak repetitive off-state voltage(1) (TJ = -40 to +125°C, sine wave, 50 to 60Hz) MCR25D MCR25M MCR25N Symbol VDRM VRRM Value 400 600 800 Unit V On-state RMS current (180° conduction angles, TC = 80°C) IT(RMS) .

  MCR25N   MCR25N



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DIGITRON SEMICONDUCTORS MCR25D, MCR25M, MCR25N SILICON CONTROLLED RECTIFIERS Available Non-RoHS (standard) or RoHS compliant (add PBF suffix). Available as “HR” (high reliability) screened per MIL-PRF-19500, JANTX level. Add “HR” suffix to base part number. MAXIMUM RATINGS Rating Peak repetitive off-state voltage(1) (TJ = -40 to +125°C, sine wave, 50 to 60Hz) MCR25D MCR25M MCR25N Symbol VDRM VRRM Value 400 600 800 Unit V On-state RMS current (180° conduction angles, TC = 80°C) IT(RMS) 25 A Peak non-repetitive surge current (half-cycle, sine wave, 60Hz, TJ = 125°C) Circuit fusing consideration (t = 8.3ms) ITSM I2t 300 373 A A2s Forward peak gate power (pulse width ≤ 1.0µs, TC = 80°C) PGM 20 W Forward average gate power (t = 8.3ms, TC = 80°C) PG(AV) 0.5 W Forward peak gate current (pulse width ≤ 1.0µs, TC = 80°C) IGM 2.0 A Operating junction temperature range TJ -40 to +125 °C Storage temperature range Tstg -40 to +150 °C Note 1: V.


MCR25M MCR25N MCR25D


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