MCR12MG

MCR12DG, MCR12MG, MCR12NG Silicon Controlled Rectifiers —­ 400V - 800V Thyristors Datasheet Pb Description Designed primarily for half-wave ac control applications, such as motor controls, heating controls and power supplies; or wherever half−wave silicon gate−controlled, solid−state devices are needed. Additional Information Features ■ Blocking Voltage to 800 Volts ■ On−State Current Rating of 12 Amperes RMS at 80°C ■ High Surge Current Capability − 100 Amperes ■ Rugged, Economical TO−220AB Package ■ Glass Passivated Junctions for Reliability and Uniformity ■ Minimum and Maximum Values of IGT, VGT an IH Specified for Ease of Design ■ High Immunity to dv/dt − 100 V/μsec Minimum at 125°C ■ These are Pb−Free devices Resources Accessories Samples Pin Out Functional Diagram CASE 221A STYLE 4 1 2 © 2021 Littelfuse, Inc. 1 Specifications are subject to change without notice. Revised: GD. 05/24/21 MCR12DG, MCR12MG, MCR12NG Silicon Controlled Rectifiers —­ 400V - 800V Thyristors Datasheet Maximum Ratings (TJ = 25°C unless otherwise noted) Rating Part Number Symbol Value Unit Peak Repetitive Off-State Voltage (Note 1) (TJ = -40 to 125°C, Sine Wave, 50 to 60 Hz, Gate Open) MCR12DG MCR12MG MCR12NG On-State RMS Current (180° Conduction Angles; TC = 80°C) Peak Non-repetitive Surge Current (1/2 Cycle, Sine Wave 60 Hz, TJ = 125°C) Circuit Fusing Consideration (t = 8.3 ms) Forward Peak Gate Power (Pulse Width ≤ 1.0 µs, TC = 80°C) Forward Average Gate Power (t = 8.3...