General Purpose Transistor
MMBT5401-G (PNP)
RoHS Device
Features
-Epitaxial planar die construction. -Complementary NP...
General Purpose
Transistor
MMBT5401-G (
PNP)
RoHS Device
Features
-Epitaxial planar die construction. -Complementary
NPN type available (MMBT5551-G). -Ideal for medium power amplification and switching.
Diagram:
Collector 3
1 Base
Marking: 2L
2 Emitter
0.056(1.40) 0.047(1.20)
0.041(1.05) 0.035(0.90)
SOT-23
0.119(3.00) 0.110(2.80)
3
12
0.079(2.00) 0.071(1.80)
0.006(0.15) 0.002(0.05)
0.100(2.55) 0.089(2.25)
0.020(0.50) 0.012(0.30)
0.004(0.10) max 0.008(0.20) min
Dimensions in inches and (millimeter)
Maximum Ratings (at TA=25°C unless otherwise noted)
Parameter
Symbol
Value
Unit
Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current - continuous Collector dissipation Junction and storage temperature
VCBO VCEO VEBO
IC PC TJ, TSTG
-160 -150
-5 -0.6 0.3 -55 ~ +150
V V V A W OC
Electrical Characteristics (at TA=25°C unless otherwise noted)
Parameter
Conditions
Symbol
Min
Max Unit
Collector-base breakdown voltage Collector-emitter ...
