MMBT4403

Plastic-Encapsulate Transistors FEATURES Switching transistor) MMBT4403 (PNP) Marking:2T MAXIMUM RATINGS (TA=25 Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current -Continuous Collector Power Dissipation Junction Temperature Storage Temperature unless otherwise noted) Symbol Value VCBO -40 VCEO -40 VEBO -5 IC 600 PC 300 TJ 150 Tstg -55 to +150 Unit V V V mA mW 1. BASE 2. EMITTER 3. COLLECTO SOT-23 ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified) Parameter Symbol Test conditions Collector-base breakdown voltage VCBO IC=-100μA , IE=0 Collector-emitter breakdown voltage VCEO IC= -1mA , IB=0 Emitter-base breakdown voltage VEBO IE=-100μA, IC=0 Collector cut-off current ICBO VCB=-35V, IE=0 Collector cut-off current ICEO VCE=-35 V, IB=0 Emitter cut-off current IEBO VEB=-4V,IC=0 Min Max Unit -40 V -40 V -5 V -0.1 μA -0.1 μA -0.1 μA DC current gain hFE VCE=-2V, IC= -150mA 100 300 Collector-e...