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MMBT3906 Dataheets PDF



Part Number MMBT3906
Manufacturers Taiwan Semiconductor
Logo Taiwan Semiconductor
Description PNP Small Signal Transistor
Datasheet MMBT3906 DatasheetMMBT3906 Datasheet (PDF)

Small Signal Product MMBT3906 Taiwan Semiconductor 350mW, PNP Small Signal Transistor FEATURES - Epitaxial planar die construction - Surface device type mounting - Moisture sensitivity level 1 - Matte Tin (Sn) lead finish with Nickel (Ni) underplate - Pb free version and RoHS compliant - Packing code with suffix "G" means green compound (halogen-free) SOT-23 MECHANICAL DATA - Case: SOT- 23, molded plastic - Terminal: Matte tin plated, lead free, solderable per MIL-STD-202, Method 208 guaran.

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Small Signal Product MMBT3906 Taiwan Semiconductor 350mW, PNP Small Signal Transistor FEATURES - Epitaxial planar die construction - Surface device type mounting - Moisture sensitivity level 1 - Matte Tin (Sn) lead finish with Nickel (Ni) underplate - Pb free version and RoHS compliant - Packing code with suffix "G" means green compound (halogen-free) SOT-23 MECHANICAL DATA - Case: SOT- 23, molded plastic - Terminal: Matte tin plated, lead free, solderable per MIL-STD-202, Method 208 guaranteed - High temperature soldering guaranteed: 260oC/10s - Weight: 0.008g (approximately) - Marking Code: 2A MAXIMUM RATINGS AND ELECTRICAL CHARACTERSTICS (TA=25℃ unless otherwise noted) PARAMETER SYMBOL VALUE Power Dissipation PD 350 Collector-Base Voltage VCBO -40 Collector-Emitter Voltage VCEO -40 Emitter-Base Voltage VEBO -5 Collector Current IC -200 Thermal Resistance Junction-Ambient RθJA 357 Junction and Storage Temperature Range TJ , TSTG -55 to + 150 Notes:1. V.


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