MMBT9018G

MMBT9018【NPN Transistors / 200mW / SOT-23】 NPN Silicon Epitaxial Planar Transistors Features ◆ Switching and AF amplifier applications PACKAGE OUTLINE Absolute Maximum Ratings【TA=25℃】 Parameter Collector Base Voltage Collector Emitter Voltage Emitter Base Voltage Collector Current Power Dissipation DC Current Gain VCE=5V, IC=1mA VCE=5V, IC=1mA MMBT9018G MMBT9018H Collector Base Breakdown Voltage IC=100μA Collector Emitter Breakdown Voltage IC=1mA Emitter Base Breakdown Voltage IC=100μA Collector Saturation Voltage IC=10mA, IB=1mA Collector Cutoff Current VCB = 12 V Collector Base Capacitance VCB=10V,f=1MHz Gain Bandwidth Product VCE=5V, IC=5mA Junction Temperature Storage Temperature Range Symbol VCBO VCEO VEBO Ic PD hFE V(BR)CBO V(BR)CEO V(BR)EBO VCEsat ICBO CCBO fT Tj TS Min Typ Max 30 ----- 15 ----- 5 ----- 50 ----- ----- 200 ----- 75 ----- 105 105 190 30 15 ----- 5 ----- 0.5 ----- 50 ----- 1.3 1.7 700 1100 ----- 150 -55 to...