WWW.Microsemi .COM
PRELIMINARY
RF PRODUCTS DIVISION
MMBR5179LT1
RF & MICROWAVE TRANSISTORS
DESCRIPTION
The MMBR5179L...
WWW.Microsemi .COM
PRELIMINARY
RF PRODUCTS DIVISION
MMBR5179LT1
RF & MICROWAVE
TRANSISTORS
DESCRIPTION
The MMBR5179LT1 is a low noise, high gain, discrete silicon bipolar
transistors housed in low cost plastic packages.
IMPORTANT: For the most current data, consult MICROSEMI’s website: http://www.microsemi.com
KEY FEATURES
! High FTau-1.4GHz
! Low noise-4.5dB@200MHz
! Low cost SOT23 package
Symbol VCBO VCEO VEBO IC PDISS TJ
TSTG
ABSOLUTE MAXIMUM RATINGS (TCASE = 25 C)
Parameter
Value
Collector-Base Voltage
20
Collector-Emitter Voltage
12
Emitter-Base Voltage
2.5
Device Current
50
Power Dissipation
375
Junction Temperature
150
Storage Temperature
-55 to +150
Unit V V V mA mW
C
C
THERMAL DATA
RTH(j-c) Junction-Case Thermal Resistance 200 C/W
APPLICATIONS/BENEFITS
! LNA, Oscillator, Pre-Driver
SOT-23 MMBR5179LT1
Symbol
BVCBO BVCEO ICBO
hFE
STATIC ELECTRICAL SPECIFICATIONS (TCASE = 25 C)
Test
IC = .01mA IC =3mA VEB = 15V VCB = 1 V
Conditions
IE = 0 IB = 0 IE...
