NPN Silicon High-Frequency Transistor
Shanghai Lunsure Electronic Technology Co.,Ltd Tel:0086-21-37185008 Fax:0086-21-57152769
MMBR901
Description
• High C...
Description
Shanghai Lunsure Electronic Technology Co.,Ltd Tel:0086-21-37185008 Fax:0086-21-57152769
MMBR901
Description
High Current-Gain – Bandwidth Products Low Noise Figure @ f=1.0GHz – NF(matched)=1.9dB (Typ) High Power Gain – Gpe(matched)=12.0dB (Typ) @ f=1.0GHz Operating & Storage Temperature: -55°C to +150°C Marking Code: 7A
MAXIMUM RATINGS
Rating
Symbol Value
Unit
Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage
VCEO 15 Vdc VCBO 25 Vdc VEBO 2.0 Vdc
Collector Current - Continuous
IC 30 mAdc
Thermal Resistance, Junction to Case
RqJC 250 oC/W
Power Dissipation @ TC=75oC (1) Derate above 75oC
PD(max)
0.300 4.0
Watt mW/oC
Electrical Characteristics @ 25oC Unless Otherwise Noted
Characteristics
OFF CHARACTERISTICS
Symbol Min Max Unit
Collector-Emitter Breakdown Voltage (IC = 1.0mAdc, IB = 0)
Collector-Base Breakdow n Voltage (IC = 0.1mAdc, IE = 0)
Emitter-Base Breakdown Voltage (IE = 0.1mAdc, IC = 0)
Collector Cutoff Current ...
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