MMBFJ309L, MMBFJ310L, SMMBFJ309L, SMMBFJ310L
JFET - VHF/UHF Amplifier Transistor
N−Channel
Features
• Drain and Source...
MMBFJ309L, MMBFJ310L, SMMBFJ309L, SMMBFJ310L
JFET - VHF/UHF Amplifier
Transistor
N−Channel
Features
Drain and Source are Interchangeable S Prefix for Automotive and Other Applications Requiring Unique
Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
MAXIMUM RATINGS
Rating
Symbol Value
Unit
Drain−Source Voltage
VDS 25 Vdc
Gate−Source Voltage
VGS 25 Vdc
Gate Current
IG 10 mAdc
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation FR−5 Board, (Note 1) TA = 25°C Derate above 25°C
Symbol PD
Max
225 1.8
Unit
mW mW/°C
Thermal Resistance, Junction−to−Ambient RqJA
556 °C/W
Junction and Storage Temperature
TJ, Tstg −55 to +150 °C
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be aff...
