Document
2N2906 2N2906A 2N2907 2N2907A
PNP SILICON TRANSISTOR
w w w. c e n t r a l s e m i . c o m
DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N2906, 2N2907 series types are silicon PNP epitaxial planar transistors designed for small signal, general purpose switching applications.
MARKING: FULL PART NUMBER
TO-18 CASE
MAXIMUM RATINGS: (TA=25°C) Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current Power Dissipation Power Dissipation (TC=25°C) Operating and Storage Junction Temperature Thermal Resistance Thermal Resistance
SYMBOL VCBO VCEO VEBO IC PD PD TJ, Tstg ΘJA ΘJC
2N2906 2N2907
60
2N2906A 2N2907A
60
40 60
5.0
600
400
1.8
-65 to +200
438
97
ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted) 2N2906
2N2907
SYMBOL
TEST CONDITIONS
MIN MAX
ICBO
VCB=50V
- 20
ICBO
VCB=50V, TA=150°C
- 20
ICEV
VCE=30V, VEB=0.5V
- 50
BVCBO
IC=10μA
60 -
BVCEO
IC=10mA
40 -
BVEBO
IE=10μA
5.0 -
VCE(SAT)
IC=150mA, IB=15mA
- 0.