2N2605UB

TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803 Website: http: //www.microsemi.com Gort Road Business Park, Ennis, Co. Clare, Ireland Tel: +353 (0) 65 6840044 Fax: +353 (0) 65 6822298 PNP SILICON LOW POWER TRANSISTOR Qualified per MIL-PRF-19500/354 DEVICES 2N2604 2N2605 2N2604UB 2N2605UB LEVELS JAN JANTX JANTXV ABSOLUTE MAXIMUM RATINGS (TC = +25°C unless otherwise noted) Parameters / Test Conditions Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Total Power Dissipation @ TA = +25°C (1) Operating & Storage Junction Temperature Range Symbol VCBO VCEO VEBO IC PT TJ, Tstg 2N2604 2N2605 80 70 60 6.0 30 400 -65 to +200 Unit Vdc Vdc Vdc mAdc mW/°C °C THERMAL CHARACTERISTICS Parameters / Test Conditions Thermal Resistance, Junction-to-Ambient Note: 1/ Consult 19500/354 for thermal curves Symbol UB RθJA Max. 437 275 Unit °C/mW ELECTRICAL CHARACTERISTICS (TA = +25°C, unl...