Document
6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803 Website: http: //www.microsemi.com
TECHNICAL DATA SHEET
RADIATION HARDENED
NPN-SWITCHIN SILICON TRANSISTOR
Qualified per MIL-PRF-19500/251
DEVICES
2N2218 2N2218A 2N2218AL
2N2219 2N2219A 2N2219AL
LEVELS
JANSM – 3K Rads (Si) JANSD – 10K Rads (Si) JANSP – 30K Rads (Si) JANSL – 50K Rads (Si) JANSR – 100K Rads (Si)
ABSOLUTE MAXIMUM RATINGS (TC = +25°C unless otherwise noted)
Parameters / Test Conditions
Symbol
2N2218 2N2218A; L 2N2219 2N2219A; L
Collector-Emitter Voltage
VCEO
30
50
Collector-Base Voltage
VCBO
60
75
Emitter-Base Voltage
VEBO
5.0
6.0
Collector Current
Total Power Dissipation
@ TA = +25°C (1) @ TC = +25°C (2)
Operating & Storage Junction Temp. Range
IC PT Top, Tstg
800
0.8 3.0
-55 to +200
Unit
Vdc
Vdc
Vdc
mA W W °C
THERMAL CHARACTERISTICS
Parameters / Test Conditions
Symbol
Thermal Resistance, Junction-to-Case
RθJC
Note: (1) Derate linearly .