2N2218

6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803 Website: http: //www.microsemi.com TECHNICAL DATA SHEET RADIATION HARDENED NPN-SWITCHIN SILICON TRANSISTOR Qualified per MIL-PRF-19500/251 DEVICES 2N2218 2N2218A 2N2218AL 2N2219 2N2219A 2N2219AL LEVELS JANSM – 3K Rads (Si) JANSD – 10K Rads (Si) JANSP – 30K Rads (Si) JANSL – 50K Rads (Si) JANSR – 100K Rads (Si) ABSOLUTE MAXIMUM RATINGS (TC = +25°C unless otherwise noted) Parameters / Test Conditions Symbol 2N2218 2N2218A; L 2N2219 2N2219A; L Collector-Emitter Voltage VCEO 30 50 Collector-Base Voltage VCBO 60 75 Emitter-Base Voltage VEBO 5.0 6.0 Collector Current Total Power Dissipation @ TA = +25°C (1) @ TC = +25°C (2) Operating & Storage Junction Temp. Range IC PT Top, Tstg 800 0.8 3.0 -55 to +200 Unit Vdc Vdc Vdc mA W W °C THERMAL CHARACTERISTICS Parameters / Test Conditions Symbol Thermal Resistance, Junction-to-Case RθJC Note: (1) Derate linearly ...