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VS-12CWQ10FN-M3
Vishay Semiconductors
High Performance Schottky Rectifier, 2 x 6 A
Base common cathode...
www.vishay.com
VS-12CWQ10FN-M3
Vishay Semiconductors
High Performance
Schottky Rectifier, 2 x 6 A
Base common cathode
4
2 3
1 DPAK (TO-252AA)
2
Common cathode
1
3
Anode
Anode
PRIMARY CHARACTERISTICS
IF(AV)
2x6A
VR
100 V
VF at IF
0.65 V
IRM TJ max.
4 mA at 125 °C 150 °C
EAS
6 mJ
Package
DPAK (TO-252AA)
Circuit configuration
Common cathode
FEATURES Low forward voltage drop Guard ring for enhanced ruggedness and long
term reliability Popular DPAK outline Center tap configuration Small foot print, surface mountable High frequency operation Meets MSL level 1, per J-STD-020, LF maximum peak of
260 °C Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
DESCRIPTION The VS-12CWQ10FN-M3 surface mount, center tap,
Schottky rectifier series has been designed for applications requiring low forward drop and small foot prints on PC board. Typical applications are in disk drives, switching power supplies, converters, freewheeling diodes, battery charging, and reverse battery protection.
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL
CHARACTERISTICS
IF(AV) VRRM IFSM VF TJ
Rectangular waveform
tp = 5 μs sine 6 Apk, TJ = 125 °C (per leg) Range
VALUES 12 100 330 0.65
-55 to +150
UNITS A V A V °C
VOLTAGE RATINGS
PARAMETER Maximum DC reverse voltage Maximum working peak reverse voltage
SYMBOL VR
VRWM
VS-12CWQ10FN-M3 100
UNITS V
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
Maximum average forward current See fig....