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VS-12CWQ10FN-M3

Vishay

High Performance Schottky Rectifier

www.vishay.com VS-12CWQ10FN-M3 Vishay Semiconductors High Performance Schottky Rectifier, 2 x 6 A Base common cathode...


Vishay

VS-12CWQ10FN-M3

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Description
www.vishay.com VS-12CWQ10FN-M3 Vishay Semiconductors High Performance Schottky Rectifier, 2 x 6 A Base common cathode 4 2 3 1 DPAK (TO-252AA) 2 Common cathode 1 3 Anode Anode PRIMARY CHARACTERISTICS IF(AV) 2x6A VR 100 V VF at IF 0.65 V IRM TJ max. 4 mA at 125 °C 150 °C EAS 6 mJ Package DPAK (TO-252AA) Circuit configuration Common cathode FEATURES Low forward voltage drop Guard ring for enhanced ruggedness and long term reliability Popular DPAK outline Center tap configuration Small foot print, surface mountable High frequency operation Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 DESCRIPTION The VS-12CWQ10FN-M3 surface mount, center tap, Schottky rectifier series has been designed for applications requiring low forward drop and small foot prints on PC board. Typical applications are in disk drives, switching power supplies, converters, freewheeling diodes, battery charging, and reverse battery protection. MAJOR RATINGS AND CHARACTERISTICS SYMBOL CHARACTERISTICS IF(AV) VRRM IFSM VF TJ Rectangular waveform tp = 5 μs sine 6 Apk, TJ = 125 °C (per leg) Range VALUES 12 100 330 0.65 -55 to +150 UNITS A V A V °C VOLTAGE RATINGS PARAMETER Maximum DC reverse voltage Maximum working peak reverse voltage SYMBOL VR VRWM VS-12CWQ10FN-M3 100 UNITS V ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL Maximum average forward current See fig....




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