C106

C106 Series Sensitive Gate Silicon Controlled Rectifiers Reverse Blocking Thyristors Glassivated PNPN devices designed for high volume consumer applications such as temperature, light, and speed control; process and remote control, and warning systems where reliability of operation is important. Features Glassivated Surface for Reliability and Uniformity Power Rated at Economical Prices Practical Level Triggering and Holding Characteristics Flat, Rugged, Thermopad Construction for Low Thermal Resistance, High Heat Dissipation and Durability Sensitive Gate Triggering These are Pb−Free Devices MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Characteristic Symbol Max Unit Peak Repetitive Off−State Voltage (Note 1) (Sine Wave, 50−60 Hz, RGK = 1 kW, TC = −40° to 110°C) C106B C106D, C106D1* C106M, C106M1* VDRM, VRRM 200 400 600 V On-State RMS Current (180° Conduction Angles, TC = 80°C) Average On−State Current (180° Conduction Angles, TC = 80°C) IT(RMS) IT(AV) 4.0 2.55 A A Peak Non-Repetitive Surge Current (1/2 Cycle, Sine Wave, 60 Hz, TJ = +25°C) Circuit Fusing Considerations (t = 8.3 ms) ITSM I2t 20 1.65 A A2s Forward Peak Gate Power (Pulse Width v1.0 msec, TC = 80°C) Forward Average Gate Power (Pulse Width v1.0 msec, TC = 80°C) Forward Peak Gate Current (Pulse Width v1.0 msec, TC = 80°C) Operating Junction Temperature Range PGM PG(AV) IGM TJ 0.5 0.1 0.2 −40 to +110 W W A °C Storage Temperature Range Tstg − 40 to °C +150 Mounting Torque (No...