Document
MFQ107
CASE 646-05, STYLE I QUAD
DUAL IN LINE
TMOS
N-CHANNEL - ENHANCEMENT
Refer to MFE9200 for graphs
MAXIMUM RATINGS
Rating Drain-Source Voltage Drain-Gate Voltage Gate-Source Voltage Drain Current
Total Device Dissipation
@TA = 25°C(1)
Derate above 25 °C Operating and Storage
Junction Temperature Range
Symbol
Value
VDS 200 Vqg 200
vgs + 20
" ID
400
;
Four
Each
Transistors
Transistor Equal Power
Unit Vdc Vdc Vdc
mAdc
PD Tj. T stg
0.5 1.2 4.0 9.6
-55 to +150
Watts
mW/°C
°C
ELECTRICAL CHARACTERISTICS (Ta = 25°C unless otherwise noted.;
Characteristic
Symbol
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage (Vqs = o, id = 10 uA)
V(BR)DSS
Zero Gate Voltage Drain Current
(Vds = 130 v, vqs = 0)
Gate-Body Leakage Current (VQS = 15 Vdc, v D s = 0)
ON CHARACTERISTICS*
IDSS 'GSS
Gate Threshold Voltage
(Id = 1.0 mA, vds = vgs)
VGS(th)
Static Drain-Source On-Resistance (VQS = 1 Vdc) (ID = 100 mA) (ID = 250 mA) (Vqs = 2.6 V, Id = 20 mA)
Drain-Source On-Voltage (Vqs.