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MFQ107 Dataheets PDF



Part Number MFQ107
Manufacturers Motorola
Logo Motorola
Description QUAD DUAL IN LINE TMOS
Datasheet MFQ107 DatasheetMFQ107 Datasheet (PDF)

MFQ107 CASE 646-05, STYLE I QUAD DUAL IN LINE TMOS N-CHANNEL - ENHANCEMENT Refer to MFE9200 for graphs MAXIMUM RATINGS Rating Drain-Source Voltage Drain-Gate Voltage Gate-Source Voltage Drain Current Total Device Dissipation @TA = 25°C(1) Derate above 25 °C Operating and Storage Junction Temperature Range Symbol Value VDS 200 Vqg 200 vgs + 20 " ID 400 ; Four Each Transistors Transistor Equal Power Unit Vdc Vdc Vdc mAdc PD Tj. T stg 0.5 1.2 4.0 9.6 -55 to +150 Watts mW/°C °C ELECT.

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MFQ107 CASE 646-05, STYLE I QUAD DUAL IN LINE TMOS N-CHANNEL - ENHANCEMENT Refer to MFE9200 for graphs MAXIMUM RATINGS Rating Drain-Source Voltage Drain-Gate Voltage Gate-Source Voltage Drain Current Total Device Dissipation @TA = 25°C(1) Derate above 25 °C Operating and Storage Junction Temperature Range Symbol Value VDS 200 Vqg 200 vgs + 20 " ID 400 ; Four Each Transistors Transistor Equal Power Unit Vdc Vdc Vdc mAdc PD Tj. T stg 0.5 1.2 4.0 9.6 -55 to +150 Watts mW/°C °C ELECTRICAL CHARACTERISTICS (Ta = 25°C unless otherwise noted.; Characteristic Symbol OFF CHARACTERISTICS Drain-Source Breakdown Voltage (Vqs = o, id = 10 uA) V(BR)DSS Zero Gate Voltage Drain Current (Vds = 130 v, vqs = 0) Gate-Body Leakage Current (VQS = 15 Vdc, v D s = 0) ON CHARACTERISTICS* IDSS 'GSS Gate Threshold Voltage (Id = 1.0 mA, vds = vgs) VGS(th) Static Drain-Source On-Resistance (VQS = 1 Vdc) (ID = 100 mA) (ID = 250 mA) (Vqs = 2.6 V, Id = 20 mA) Drain-Source On-Voltage (Vqs.


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