2N2647

2N2646, 2N2647 High-reliability discrete products and engineering services since 1977 SILICON UNIJUNCTION TRANSISTOR FEATURES  Available as “HR” (high reliability) screened per MIL-PRF-19500, JANTX level. Add “HR” suffix to base part number.  Available as non-RoHS (Sn/Pb plating), standard, and as RoHS by adding “-PBF” suffix. MAXIMUM RATINGS Rating Symbol Value Unit Power dissipation(1) PD 300 mW RMS emitter current IE(EMS) 50 mA Peak pulse emitter current (2) IE 2 Amps Emitter reverse voltage VB2E 30 Volts Interbase voltage VB2B1 35 Volts Operating junction temperature range TJ -65 to 125 °C Storage temperature range Tstg -65 to 150 °C Note 1: Derate 3mW/°C increase in ambient temperature. The total power dissipation must be limited by the external circuitry. Note 2: Capacitor discharge – 10µF or less, 30 volts or less. ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified) Parameter Symbol Min Typ Max Unit Intrinsi...