2N2647

Transistor Unijunction 1. Emitter 2. Base 1 3. Base 2 Description: A PN Unijunction Transistor designed for use in pulse and timing circuits, sensing circuits, and thyristor trigger circuits. Features:   Low peak point current: 2µA (Max.)   Low emitter reverse current: 200nA (Max.)   Passivated surface for reliability and uniformity Maximum Ratings Characteristic Symbol Rating Unit Power Dissipation (Note 1) RMS Emitter Current Peak Pulse Emitter Current (Note 2) Emitter Reverse Voltage Interbase Voltage Operation and Storage Junction Temperature Range PD IE(RMS) IE VB2E VB2B1 TJ, TSTG 300 50 2 30 35 -65 to +150 mW mA A V °C Notes: 1. Derate 3mW/°C increase in ambient temperature. The total power dissipation (available power to Emitter and Base-Tow) must be limited by the external circuitry. 2. Capacitor discharge – 10µF or less, 30V or less. www.element14.com www.farnell.com www.newark.com Page <1> 21/03/13 V1.0 Transistor Unijunction Electrical C...