2N2102

MAXIMUM RATINGS Rating Collector-Emitter Voltage Collector-Emitter Voltage, Rgg « 10 Ohms Collector-Base Voltage Emitter-Base Voltage —Collector Current Continuous @Total Device Dissipation TA = 25°C Derate above 25°C Total Device Dissipation (a Tc = 25°C Derate above 25°C Operating and Storage Junction Temperature Range Symbol VCEO VCER VCBO VEBO 'C PD PD T J, Tst g Value 65 80 120 7.0 1.0 1.0 5.71 5.0 28.6 -65 to + 200 Unit Vdc Vdc Vdc Vdc Adc Watt mWfC Watts mW/°C °C 2N2102 CASE 79-02, STYLE 1 TO-39 (TO-205AD) AMPLIFIER TRANSISTOR NPN SILICON THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient Symbol R&jc RflJAd) Max 35 175 Unit °C/W °c/w Refer to 2N3019 for graphs. ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted. Characteristic Symbol Min Typ Max OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage dc = 100 mAdc, Rgg =s 10 ohms) Collector-Emitter Sustaining Voltage(2) dc = 10...