2N2102

Transistor Description: This is a Silicon NPN transistor in a TO-39 type case designed primarily for amplifier and switching applications. This device features high breakdown voltage low leakage current, low capacity, and beta useful over an extremely wide current range. Absolute Maximum Ratings: Collector-Base Voltage, Vcbo : 120V Collector-Emitter Voltage, Vceo : 65V Emitter-Base Voltage, Vebo : 7V Continuous Collector Current, Ic : 1A Total Device Dissipation (Ta = +25ºC), Pd : 800mW Derate above 25ºC : 4.6mW/ºC Total Device Dissipation (Tc = + 25ºC), Pd : 5W Derate above 25ºC : 28.6mW/ºC Operating Junction Temperature Range, Tj : -65ºC to +200ºC Storage Temperature Range, Tstg : -65ºC to 200ºC Thermal Resistance, Junction-to-Case, Rthjc : 35ºC/W Thermal Resistance, Junction-to-Ambient, Rthja : 175ºC/W Lead Temperature (During Soldering, 1/16" from case, 60sec max), Tl : 300ºC Electrical Characteristics: (Ta = +25ºC Unless otherwise specifie...