2N1613

Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN SILICON PLANAR EPITAXIAL TRANSISTORS 2N1613 TO-39 Metal Can Package ABSOLUTE MAXIMUM RATINGS (Ta=25ºC unless specified otherwise) DESCRIPTION SYMBOL Collector Emitter Voltage (RBE<10Ω) VCER Collector Base Voltage VCBO Emitter Base Voltage VEBO Collector Current Continuous IC Power Dissipation @ Ta=25ºC PD Derate Above 25ºC Power Dissipation@ Tc=25ºC PD Derate Above 25ºC Operating And Storage Junction Tj, Tstg Temperature Range THERMAL RESISTANCE Junction to Ambient Rth(j-a) Junction to Case Rth(j-c) ELECTRICAL CHARACTERISTICS (Ta=25ºC unless specified otherwise) DESCRIPTION SYMBOL Collector Emitter Breakdown Voltage VCER(sus)* IC=100mA,RBE <10Ω Collector Base Breakdown Voltage BVCBO IC=100µA, IE=0 Emitter Base Breakdown Voltage BVEBO IE =100µA, IC=0 Collector Leakage Current ICBO VCB=60V, IE=0 VCB=60V, IE=0,TA=150ºC Emitter Leakage Current IE...