2N1613

MAXIMUM RATINGS Rating Collector-Emitter Voltage (RBE * 10 Ohms) Collector-Base Voltage Emitter-Base Voltage —Collector Current Continuous @Total Device Dissipation TA = 25°C Derate above 25°C Total Device Dissipation (a Tq = 25°C Derate above 25°C Operating and Storage Junction Temperature Range THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Case Symbol V CER Value 50 Unit Vdc VCBO VEBO 'C PD pd TJ' Tst g 75 7.0 500 0.8 4.57 3.0 17.15 - 65 to + 200 Vdc Vdc mAdc Watt mW/°C Watts ,mW/°C °C Symbol R&jc Max 58.3 Unit °C/W 2N1613 JAN, JTX, JTXV AVAILABLE CASE 79-02, STYLE 1 TO-39 (TO-205AD) GENERAL PURPOSE TRANSISTOR NPN SILICON ELECTRICAL CHARACTERISTICS (Ta = 25°C unless otherwise noted.; Characteristic OFF CHARACTERISTICS Collector-Emitter Breakdown Voltaged) 0c = 100 mAdc, Rbe * 10 Ohms) Collector-Base Breakdown Voltage (lc = 100 //Adc, Ie = 0) Emitter-Base Breakdown Voltage 0e = 100 ^Adc, lc = 0) Collector Cutoff Current (Vcb = 60 Vdc, ...