TECHNICAL DATA
NPN LOW POWER SILICON TRANSISTOR
Qualified per MIL-PRF-19500/253
Devices
2N930
Qualified Level
JAN JANT...
TECHNICAL DATA
NPN LOW POWER SILICON
TRANSISTOR
Qualified per MIL-PRF-19500/253
Devices
2N930
Qualified Level
JAN JANTX JANTXV
MAXIMUM RATINGS
Ratings Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current Total Power Dissipation
@ TA = +250C(1) @ TC = +250C(2)
Operating & Storage Junction Temperature Range
THERMAL CHARACTERISTICS
Characteristics
Thermal Resistance, Junction-to-Case
1) Derate linearly 2.0 mW/0C above TA = +250C 2) Derate linearly 4.0 mW/0C above TC = +250C
Symbol VCEO VCBO VEBO IC
PT
TJ, Tstg
Symbol RθJC
Value 45 60 6.0 30 300 600
-55 to +200
Units Vdc Vdc Vdc mAdc
mW
0C
Max. 97
Unit 0C/W
TO- 18* (TO-206AA)
*See appendix A for package outline
ELECTRICAL CHARACTERISTICS (TC = +250C unless otherwise noted)
Characteristics
Symbol
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage IC = 10 mAdc
Collector-Base Cutoff Current
V(BR)CEO
VCB = 60 Vdc VCB = 45 Vdc Emitter-Base Cutoff Current
ICBO
VEB = 6.0 Vdc VEB...