BSX45, -10, -16 BSX46, -10, -16 BSX47, -10
SILICON NPN TRANSISTORS
w w w. c e n t r a l s e m i . c o m DESCRIPTION: Th...
BSX45, -10, -16 BSX46, -10, -16 BSX47, -10
SILICON
NPN TRANSISTORS
w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR BSX45 series devices are silicon
NPN epitaxial
transistors designed for general purpose amplifier and switching applications.
MARKING: FULL PART NUMBER
TO-39 CASE
MAXIMUM RATINGS: (TA=25°C) Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current Peak Collector Current Peak Base Current Power Dissipation (TC=25°C) Power Dissipation Operating and Storage Junction Temperature Thermal Resistance Thermal Resistance
SYMBOL VCBO VCEO VEBO IC ICM IBM PD PD TJ, Tstg ΘJC ΘJA
BSX45 80
40
BSX46 100 60 7.0 1.0 1.5 200 6.25 0.8
-65 to +200 28 219
BSX47 120
80
ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted)
BSX45
BSX46
SYMBOL TEST CONDITIONS
MIN MAX MIN MAX
ICBO
VCB=60V
- 30
- 30
ICBO
VCB=60V, TA=150°C
- 10
- 10
ICBO
VCB=80V
--
--
ICBO
VCB=80V, TA=150°C
--
--
IEBO
VEB=5.0V
- 10
- 10
VCE(SAT) IC=1.0A, IB=100mA
- 1.0
- 1.0
VCE(SAT) IC=500mA, IB=25mA
--
--
VBE(ON)
VCE=1.0V, IC=100mA
- 1.0
- 1.0
VBE(ON)
VCE=1.0V, IC=500mA
0.75 1.5
0.75 1.5
VBE(ON)
VCE=1.0V, IC=1.0A
- 2.0
- 2.0
fT
VCE=10V, IC=50mA, f=100MHz 50 -
50 -
Cc
VCB=10V, IE=0, f=1.0MHz
- 25
- 20
ton
IC=100mA, IB1=IB2=5.0mA
- 200
- 200
toff
IC=100mA, IB1=IB2=5.0mA
- 850
- 850
NF VCE=5.0V, IC=100μA, RS=1.0kΩ
f=1.0kHz, BW=200Hz
3.5 TYP
3.5 TYP
BSX47 MIN MAX
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