BSX46

BSX45, -10, -16 BSX46, -10, -16 BSX47, -10 SILICON NPN TRANSISTORS w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR BSX45 series devices are silicon NPN epitaxial transistors designed for general purpose amplifier and switching applications. MARKING: FULL PART NUMBER TO-39 CASE MAXIMUM RATINGS: (TA=25°C) Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current Peak Collector Current Peak Base Current Power Dissipation (TC=25°C) Power Dissipation Operating and Storage Junction Temperature Thermal Resistance Thermal Resistance SYMBOL VCBO VCEO VEBO IC ICM IBM PD PD TJ, Tstg ΘJC ΘJA BSX45 80 40 BSX46 100 60 7.0 1.0 1.5 200 6.25 0.8 -65 to +200 28 219 BSX47 120 80 ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted) BSX45 BSX46 SYMBOL TEST CONDITIONS MIN MAX MIN MAX ICBO VCB=60V - 30 - 30 ICBO VCB=60V, TA=150°C - 10 - 10 ICBO VCB=80V -- -- ICBO VCB=80V, TA=150°C -- -- IEBO VEB=5.0V - 10 - 10 VCE(SAT) IC=1.0A, IB=100mA - 1.0 - 1.0 VCE(SAT) IC=500mA, IB=25mA -- -- VBE(ON) VCE=1.0V, IC=100mA - 1.0 - 1.0 VBE(ON) VCE=1.0V, IC=500mA 0.75 1.5 0.75 1.5 VBE(ON) VCE=1.0V, IC=1.0A - 2.0 - 2.0 fT VCE=10V, IC=50mA, f=100MHz 50 - 50 - Cc VCB=10V, IE=0, f=1.0MHz - 25 - 20 ton IC=100mA, IB1=IB2=5.0mA - 200 - 200 toff IC=100mA, IB1=IB2=5.0mA - 850 - 850 NF VCE=5.0V, IC=100μA, RS=1.0kΩ f=1.0kHz, BW=200Hz 3.5 TYP 3.5 TYP BSX47 MIN MAX --- 30 - 10 - 10 --...