BSX20

Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN SILICON PLANAR EPITAXIAL TRANSISTORS BSX20 TO-18 APPLICATIONS High Speed Saturated Switching Applications ABSOLUTE MAXIMUM RATINGS DESCRIPTION Collector -Base Voltage Collector -Emitter Voltage Collector -Emitter Voltage Emitter -Base Voltage Collector Peak Current (t=10us) Power Dissipation@ Ta=25 degC @Tc=25 deg C Operating And Storage Junction Temperature Range THERMAL RESISTANCE Junction to Case Junction to Ambient SYMBOL VCBO VCES VCEO VEBO ICM Ptot Tj, Tstg Rth(j-c) Rth(j-a) VALUE 40 40 15 4.5 0.5 0.36 1.20 -65 to +200 146 486 UNIT V V V V A W W deg C deg C/W deg C/W ELECTRICAL CHARACTERISTICS (Ta=25 deg C Unless Otherwise Specified) DESCRIPTION SYMBOL TEST CONDITION Collector-Cut off Current ICBO VCB=20V, IE=0 VCB=20V, IE=0, Ta=150 deg C MIN MAX - 400 - 30 UNIT nA uA ICES VCE=15V, VBE=0, Ta=55 deg C VCE=40V, VBE=0 - 400 - 1.0 nA uA Emitter-Cut off Current Base-Cut o...