Document
T
BSW66A BSW67A BSW68A
CASE 79, STYLE 1 TO-39 (TO-205AD)
TRANSISTOR
NPN SILICON
MAXIMUM RATINGS
Rating
Symbol BSW BSW BSW
66A 67A 68A
Collector-Emitter Voltage
VCEO 100 120 150
Collector-Base Voltage
VCBO 100 120 150
Emitter-Base Voltage
Collector Current - Continuous
@Total Device Dissipation Ta = 25°C
Derate above 25°C
VEBO
ic
PD
6.0 2.0
0.8 4.57
@Total Device Dissipation Tc = 25°C
Derate above 25°C
pd
5.0 28.6
Operating and Storage Junction Temperature Range
Tj. stg -65 to +200
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Thermal Resistance, Junction to Case
Rgjc
35
Thermal Resistance, Junction to Ambient R#JA
220
Unit
Vdc Vdc Vdc
Amp
Watt
mW/°C
Watt
mW/°C
°C
Unit
°C/W °C/W
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.)
OFF CHARACTERISTICS
Characteristic
Collector-Emitter Breakdown Voltage (IC = 10 mAdc, IB = 0)
BSW66A
BSW67A BSW68A
Collector-Base Breakdown Voltage (IC = 100 uAdc)
BSW66A BSW67A BSW68A
Collector-Base Cu.