BFX85

Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current - Continuous @Total Device Dissipation Ta = 25°C Derate above 25°C Operating and Storage Junction Temperature Range THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient Symbol VCEO VCBO VEBO ic PD Tj, T stg Symbol RwjC Roja Value 60 100 6.0 1.0 0.8 4.57 -65 to +200 Max 35 220 Unit Vdc Vdc Vdc Amp Watt mW/°C °C Unit °C/W °c/w BFX85 CASE 79, STYLE 1 TO-39 (TO-205AD) AMPLIFIER TRANSISTOR NPN SILICON Refer to 2N3019 for graphs. ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.) Characteristic OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage (IC = 10 mAdc, VBE = 0) Collector-Base Breakdown Voltage PC = 100 uAdc, IB = 0) Collector Cutoff Current (VcB = 80 Vdc, Ie = 0) (VcB = 80 Vdc, IE = 0, Tj = 100°C) (VcB = 100 Vdc, Ie = 0) (VCB = 1 0° Vdc - IE = 0. Tj = 1 00°C) Emitter Cutoff Current...