)
BSS80B,C
CASE 318-02/03, STYLE 6
SOT-23 (TO-236AA/AB)
GENERAL PURPOSE TRANSISTOR
PNP SILICON
MAXIMUM RATINGS
Rating ...
)
BSS80B,C
CASE 318-02/03, STYLE 6
SOT-23 (TO-236AA/AB)
GENERAL PURPOSE
TRANSISTOR
PNP SILICON
MAXIMUM RATINGS
Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage
—Collector Current Continuous
Symbol vCEO vCBO vEBO
'C
THERMAL CHARACTERISTICS
Characteristic
*Total Device Dissipation, Ta = 25°C Derate above 25°C
Symbol PD
Storage Temperature
T stg
'Thermal Resistance Junction to Ambient
R &JA
mmPackage mounted on 99.5% alumina 10 x 8 x 0.6
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.)
_^^^
OFF CHARACTERISTICS
Characteristic
Collector-Emitter Breakdown Voltage dC = 10 mA)
Collector-Base Breakdown Voltage dC = 10 tiA)
Emitter-Base Breakdown Voltage (IE = 10 tiA)
Collector Cutoff Current (Vcb = 50 Vdc)
(VCB = 50 Vdc, Ta = 150°C
Emitter Cutoff Current
(VBE = 3.0 Vdc)
ON CHARACTERISTICS
DC Current Gain flC = 150 mA, VCE = 10 Vdc)
Collector-Emitter Saturation Voltage
dC = 150 mA, Bl = 15 mA) dC = 500 mA, Bl = 50 mA)
SMALL-...
