BY448

Silicon Mesa Rectifiers BY448.BY458 Features D Glass passivated junction D Hermetically sealed package Applications High voltage rectifier Efficiency diode in horizontal deflection circuits 94 9539 Absolute Maximum Ratings Tj = 25_C Parameter Test Conditions Reverse voltage Peak forward surge current Average forward current Junction temperature Storage temperature range tp=10ms Type BY448 BY458 Symbol VR VR IFSM IFAV Tj Tstg Value 1500 1200 30 2 140 –55...+150 Unit V V A A °C °C Maximum Thermal Resistance Tj = 25_C Parameter Junction ambient Test Conditions on PC board with spacing 25mm Symbol RthJA Value 100 Unit K/W Characteristics Tj = 25_C Parameter Test Conditions Type Symbol Min Typ Max Unit Forward voltage Reverse current Total reverse recovery time IF=3A VR=VRSM VR=VRSM, Tj=140°C IF=1A, –diF/dt=0.05A/ms VF IR IR trr 1.6 V 3 mA 140 mA 20 ms TELEFUNKEN Semiconductors Rev. A1, 12-Dec-94 1 (4) BY448.BY458 Typical Characteristics (Tj = 25_C unle...