BF258

MAXIMUM RATINGS Rating Collector-Emitter Voltage Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current - Continuous @TaTotal Device Dissipation = 25°C Derate above 25°C Total Device Dissipation @Tq = 25°C Derate above 25°C Operating and Storage Junction Temperature Range THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Case Symbol BF BF BF 257 258 259 VCEO VCER VCBQ 160 250 300 160 250 300 160 250 300 VEBO c PD 5.0 0.1 0.8 4.57 pd Tj, T stg 5.0 28.6 -65 to +200 Unit Vdc Vdc Vdc Vdc Adc' Watt mW/°C Watt mW/°C °C Symbol RflJC Max 35 Unit °C/W BF257 BF258 BF259 CASE 79, STYLE 1 TO-39 (TO-205AD) HIGH VOLTAGE TRANSISTOR NPN SILICON ELECTRICAL CHARACTERISTICS (Ta = 25°C unless otherwise noted.) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage (IC = 30 mAdc, Ib = 0) Collector-Base Breakdown Voltage (IC = 100 uAdc. Ie = 0) Emitter-Base Breakdown Voltage...