MAXIMUM RATINGS
Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current - Continu...
MAXIMUM RATINGS
Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current - Continuous
Total Device Dissipation @Ta = 25°C
Derate above 25°C
Total Device Dissipation @Tc = 25°C
Derate above 25°C Operating and Storage Junction
Temperature Range
Symbol
Value
Unit
VCEO 12 Vdc
VCBO
30
Vdc
VEBO
c
PD
3 Vdc
30 mAdc
One Die Both Die
575 3.29
625 mW
3.57 mW/°C
pd 1.8 2.5 Watts
10.3
14.3 mW/°C
Tj. Tstg -65 to +200
°C
BFY84
CASE 654-07 DUAL
AMPLIFIER
TRANSISTOR
NPN SILICON
ELECTRICAL CHARACTERISTICS (Ta = 25°C unless otherwise noted.)
Characteristic
Symbol
Min Max Unit
| ||]
OFF CHARACTERISTICS
Collector-Emitter Sustaining Voltage(1) (lc = 3.0 mA, Ir. = 0)
Collector-Base Breakdown Voltage
(lc = 1.0 uA, l£ = 0)
Emitter-Base Breakdown Voltage
(Ir; = 10 uA, lc = 0)
Collector Cutoff Current
(Vqb = 15 Vdc, Ie = 0) (VcB = 15 Vdc, Ie = 0, Ta = 150°C)
VCEO(sus) V(BR)CBO V(BR)EBO
ICBO
12 30 3.0
—
— Vdc — Vdc — Vdc...
