Document
1N3600, 1N4150 & 1N4150-1
Silicon Switching Diode
Features
Available in JAN, JANTX, and JANTXV per MIL-PRF-19500/231
Metallurgically Bonded Hermetically Sealed Double Plug Construction
Maximum Ratings
Operating & Storage Temperature: -65°C to +175°C Operating Current: 300 mA @ TA = +25°C Derating: 2 mA DC/°C above TL = +75°C @ L = 3/8” Surge Current A: 2 A (pk) tP = 8.3 ms, VRM = 0 Surge Current B: 4 A (pk) tP = 1 µs, VRM = 0
Rev. V1
Electrical Specifications @ +25°C (unless otherwise Specified)
TYPE #
VBR IR = 10 μA
VRWM
1N3600 1N4150, -1
V dc 75 75
V (pk) 50 50
IR1 VR = 50 Vdc
TA = 25°C
μA dc 0.1 0.1
IR2 VR = 50 Vdc TA =150°C
μA dc 100 100
C Trr
IR = 0; f = 1 MHz
IF = IR = 10 to 100 mA dc
ac signal = 50 mV (p-P)
RL = 100 Ω
pF ns 2.5 4.0
2.5 4.0
Forward Voltage Limits - All Types
Limits
minimum maximum
VF1 IF = 1 mA dc
V dc 0.540 0.620
VF2 IF = 10 mA dc
V dc 0.660 0.740
VF3 IF = 50 mA dc
(Pulsed) V dc 0.760
0.860
VF4 IF = 100 mA dc.