1N916, 1N916A, 1N916B
HIGH CONDUCTANCE FAST DIODES
Absolute Maximum Ratings (T a = 25oC)
Working Inverse Voltage Averag...
1N916, 1N916A, 1N916B
HIGH CONDUCTANCE FAST DIODES
Absolute Maximum Ratings (T a = 25oC)
Working Inverse Voltage Average Rectified Current DC Forward Current Recurrent Peak Forward Current Peak Forward Surge Current Pulse width = 1 second Pulse width = 1 microsecond Total Device Dissipation Derate above 25oC Thermal Resistance, Junction to Ambient Junction Temperature Storage Temperature Range
Symbol WIV IO IF if
if(surge) if(surge)
PD
RθJA Tj TS
Value 75 200 300 400
1 4 500 3.33 300 175 -65 to +200
Unit V mA mA mA
A A mW mW/oC oC/W OC OC
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1N916, 1N916A, 1N916B
Characteristics at TA = 25oC
Symbol
Min.
Typ.
Max.
Unit
Breakdown Voltage at IR = 100µA at IR = 5µA
BV 100 BV 75
-
-V -V
Reverse Current
at VR = 20V at VR = 20V, TA = 150oC at VR = 75V
IR IR IR -
- 25 nA
- 50 µA - 5 µA
Forward Voltage at IF = 5mA at IF = 10mA at IF = 20mA at IF = 30mA Dio...
