Document
BCX71G,H,J,K
MAXIMUM RATINGS
CASE 318-02/03, STYLE 6
SOT-23 (TO-236AA/AB)
GENERAL PURPOSE TRANSISTOR
PNP SILICON
Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage
—Collector Current Continuous
THERMAL CHARACTERISTICS
Symbol vCEO VCBO v EBO
'C
Characteristic
•Total Device Dissipation, TA = 25°C
Derate above 25°C
Symbol PD
Storage Temperature
Tstg
'Thermal Resistance Junction to Ambient
R 0JA
. 'Package mounted on 99.5% alumina 10 x 8 x 0.6 mm.
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.)
Characteristic
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage dC = 2.0 mAdc, \q = 0)
Emitter-Base Breakdown Voltage (|E = 1.0A*Adc, c| = o)
Collector Cutoff Current (VC e = 32 Vdc)
(VCE = 32 Vdc, TA = 150°C) ON CHARACTERISTICS
DC Current Gain dC = 10 /iAdc, Vqe = 5.0 Vdc)
BCX71Q BCX71H BCX71J BCX71K
dC = 2.0 mAdc, VCE = 5.0 Vdc)
BCX71G BCX71H BCX71J BCX71K
dC = 50 mAdc, Vqe = 1.0 Vdc)
BCX71G BCX71H BCX71J BCX71K
flC = 2.0 m.