MUR5060

Silicon Super Fast Recovery Diode Features High Surge Capability Types from 400 V to 600 V VRRM Not ESD Sensitive Note: 1. Standard polarity: Stud is cathode. 2. Reverse polarity (R): Stud is anode. 3. Stud is base. MUR5040 thru MUR5060R VRRM = 400 V - 600 V IF = 50 A DO-5 Package Maximum ratings, at Tj = 25 °C, unless otherwise specified ("R" devices have leads reversed) Parameter Symbol Conditions MUR5040 (R) MUR5060 (R) Repetitive peak reverse voltage RMS reverse voltage DC blocking voltage Continuous forward current VRRM VRMS VDC IF TC ≤ 125 °C 400 280 400 50 600 420 600 50 Surge non-repetitive forward current, Half Sine Wave Operating temperature Storage temperature IF,SM TC = 25 °C, tp = 8.3 ms Tj Tstg 600 -55 to 150 -55 to 150 600 -55 to 150 -55 to 150 Electrical characteristics, at Tj = 25 °C, unless otherwise specified Parameter Symbol Conditions MUR5040 (R) Diode forward voltage Reverse current Recovery Time Maximum reverse recovery tim...