N-CHANNEL POWER MOSFET
STF13N60M2, STFI13N60M2
N-channel 600 V, 0.35 Ω typ., 11 A MDmesh II Plus™ low Qg
2
Power MOSFETs in TO-220FP and I PAK...
Description
STF13N60M2, STFI13N60M2
N-channel 600 V, 0.35 Ω typ., 11 A MDmesh II Plus™ low Qg
2
Power MOSFETs in TO-220FP and I PAKFP packages
Datasheet − production data
Features
3 2 1
TO-220FP
1 23
I2PAKFP
(TO-281)
Figure 1. Internal schematic diagram
AM15572v1
Order codes VDS @ TJmax RDS(on) max ID
STF13N60M2 STFI13N60M2
650 V
0.38 Ω 11 A
Extremely low gate charge Lower RDS(on) x area vs previous generation Low gate input resistance 100% avalanche tested Zener-protected
Applications
Switching applications
Description
These devices are N-channel Power MOSFETs developed using a new generation of MDmesh™ technology: MDmesh II Plus™ low Qg. These revolutionary Power MOSFETs associate a vertical structure to the company's strip layout to yield one of the world's lowest on-resistance and gate charge. They are therefore suitable for the most demanding high efficiency converters.
Order codes STF13N60M2 STFI13N60M2
Table 1. Device summary
Marking
Packag...
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