NPN BCY58 – BCY59 SILICON PLANAR EPITAXIAL TRANSISTORS
The BCY58 and BCY59 are NPN transistors mounted in TO-18 metal p...
NPN BCY58 – BCY59 SILICON PLANAR EPITAXIAL
TRANSISTORS
The BCY58 and BCY59 are
NPN transistors mounted in TO-18 metal package with the collector connected to the case . They are designed for use in audio drive and low-noise input stages. Compliance to RoHS.
ABSOLUTE MAXIMUM RATINGS
Symbol
Ratings
VCEO VCES VEBO IC IB PD PD TJ TStg
Collector-Emitter Voltage(1)
Collector-Emitter Voltage (VBE =0)
Emitter-Base Voltage
Collector Current
Base Current
Total Power Dissipation
Total Power Dissipation
@ Tamb = 45° @ Tcase= 45°
Junction Temperature
Storage Temperature range
(1) Applicable up to IC = 500mA
THERMAL CHARACTERISTICS
BCY59 BCY58 BCY59 BCY58 BCY59 BCY58 BCY59 BCY58 BCY59 BCY58 BCY59 BCY58 BCY59 BCY58 BCY59 BCY58 BCY59 BCY58
Symbol
Ratings
RthJ-a RthJ-c
Thermal Resistance, Junction to mounting base Thermal Resistance, Junction to ambient in free air
Value
45 32 45 32 7 7 200
50
0.39
1
200
-65 to +150
Unit V V V mA mA
mW Watts
°C °C
Value 450 150
Unit °C/W ...
