Continental Device India Limited
An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company
PNP SILICON PLANAR EPITAXIAL ...
Continental Device India Limited
An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company
PNP SILICON PLANAR EPITAXIAL
TRANSISTORS
BC177, A, B, C BC178, A, B, C BC179, A, B, C TO-18
ABSOLUTE MAXIMUM RATINGS DESCRIPTION Collector -Emitter Voltage Collector -Emitter Voltage Collector -Base Voltage Emitter -Base Voltage Collector Current Continuous Power Dissipation@ Ta=25 degC Derate Above 25 deg C Power Dissipation@ Tc=25 degC Derate Above 25 deg C Operating And Storage Junction Temperature Range THERMAL RESISTANCE Junction to Case
SYMBOL VCEO VCES VCBO VEBO IC PD
PD
Tj, Tstg
Rth(j-c)
BC177 BC178 45 25 50 30 50 30 5.0 5.0 0.2 0.6 2.28 1.0 6.67 -65 to +200
BC179 20 25 25 5.0
UNIT V V V V A W
mW/deg C W
mW/deg C deg C
175 deg C/W
ELECTRICAL CHARACTERISTICS (Ta=25 deg C Unless Otherwise Specified)
DESCRIPTION
SYMBOL TEST CONDITION
Collector-Cut off Current
ICES VCE=20V, IE=0
Tamb=125 deg C
VCE=20V, IE=0
Collector -Base Voltage
VCBO IC=10uA, IE=0
BC177
BC178
BC179
MIN T...