BC179

Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company PNP SILICON PLANAR EPITAXIAL TRANSISTORS BC177, A, B, C BC178, A, B, C BC179, A, B, C TO-18 ABSOLUTE MAXIMUM RATINGS DESCRIPTION Collector -Emitter Voltage Collector -Emitter Voltage Collector -Base Voltage Emitter -Base Voltage Collector Current Continuous Power Dissipation@ Ta=25 degC Derate Above 25 deg C Power Dissipation@ Tc=25 degC Derate Above 25 deg C Operating And Storage Junction Temperature Range THERMAL RESISTANCE Junction to Case SYMBOL VCEO VCES VCBO VEBO IC PD PD Tj, Tstg Rth(j-c) BC177 BC178 45 25 50 30 50 30 5.0 5.0 0.2 0.6 2.28 1.0 6.67 -65 to +200 BC179 20 25 25 5.0 UNIT V V V V A W mW/deg C W mW/deg C deg C 175 deg C/W ELECTRICAL CHARACTERISTICS (Ta=25 deg C Unless Otherwise Specified) DESCRIPTION SYMBOL TEST CONDITION Collector-Cut off Current ICES VCE=20V, IE=0 Tamb=125 deg C VCE=20V, IE=0 Collector -Base Voltage VCBO IC=10uA, IE=0 BC177 BC178 BC179 MIN T...