BCW70LT1

SEMICONDUCTOR BCW69/70LT1 Shandong Yiguang Electronic Joint stock Co., Ltd TECHNICAL DATA PNP EPITAXIAL SILICON TRANSISTOR SURFACE MOUNT SMALL SIGNAL TRANSISTORS ABSOLUTE MAXIMUM RATINGS at Ta=25 Characteristic Symbol Rating Unit Package:SOT-23 Collector-Base Voltage Vcbo -50 V Collector-Emitter Voltage Vceo -45 V Emitter-Base Voltage Vebo -5.0 V Collector Current Ic -100 mA Peak Collector Current Peak Emitter Current Power Dissipation at TSB=50 (Note1) Junction Temperature ICM -200 mA IEM -200 mA PD 310 mW Tj 150 PIN: STYLE 123 Storage Temperature Tstg -65-150 ELECTRICAL CHARACTERISTICS at Ta=25 NO.1 BEC Characteristic Symbol Min Typ Max Unit Test Conditions DC Current Gain Current Gain Group A (Note2) BCW69 Current Gain Group A BCW70 Hfe 120 180 260 215 500 Vce=-5.0V Ic= -2.0mA Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Base-Emitter Voltage Vce(sat) Vbe(sat) Vbe -600 -90 -250 -700 -900 -660 Collector-Emitter Cutoff...