1N3883

Silicon Fast Recovery Diode Features High Surge Capability Types up to 400 V VRRM Not ESD Sensitive Note: 1. Standard polarity: Stud is cathode. 2. Reverse polarity (R): Stud is anode. 3. Stud is base. 1N3879 thru 1N3883R VRRM = 50 V - 400 V IF = 6 A DO-4 Package Maximum ratings, at Tj = 25 °C, unless otherwise specified ("R" devices have leads reversed) Parameter Symbol Conditions 1N3879 (R) 1N3880 (R) 1N3881 (R) 1N3882 (R) 1N3883 (R) Unit Repetitive peak reverse voltage RMS reverse voltage DC blocking voltage Continuous forward current VRRM VRMS VDC IF TC ≤ 100 °C 50 100 200 300 400 V 35 70 140 210 280 V 50 100 200 300 400 V 6 6 6 6 6A Surge non-repetitive forward current, Half Sine Wave Operating temperature Storage temperature IF,SM TC = 25 °C, tp = 8.3 ms 90 90 90 90 90 Tj -55 to 150 -55 to 150 -55 to 150 -55 to 150 -55 to 150 Tstg -55 to 150 -55 to 150 -55 to 150 -55 to 150 -55 to 150 A °C °C Electrical characteristics, at Tj = 25 °C, unless...