2N1711

2N1711 SILICON NPN TRANSISTOR w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N1711 is a silicon NPN epitaxial planar transistor designed for small signal general purpose switching applications. MARKING: FULL PART NUMBER TO-39 CASE MAXIMUM RATINGS: (TA=25°C unless otherwise noted) SYMBOL Collector-Base Voltage VCBO Collector-Emitter Voltage VCER Emitter-Base Voltage VEBO Continuous Collector Current IC Power Dissipation (TC=25°C) PD Power Dissipation PD Operating and Storage Junction Temperature TJ, Tstg 75 50 7.0 500 3.0 0.8 -65 to +200 ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted) SYMBOL TEST CONDITIONS MIN ICBO VCB=60V IEBO VEB=5.0V BVCBO IC=100μA 75 BVCER IC=10mA, RBE=10Ω 50 BVEBO IE=100μA 7.0 VCE(SAT) IC=150mA, IB=15mA VBE(SAT) IC=150mA, IB=15mA hFE VCE=10V, IC=10μA 20 hFE VCE=10V, IC=100μA 35 hFE VCE=10V, IC=10mA 75 hFE VCE=10V, IC=150mA 100 hFE VCE=10V, IC=500mA 40 fT VCE=10V, IC=...