2N718A 2N956, 2N1711
MAXIMUM RATINGS
Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage
Total...
2N718A 2N956, 2N1711
MAXIMUM RATINGS
Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage
Total Device Dissipation (a T^ = 25°C Derate above 25°C
Total Device Dissipation (S Tq = 25°C Derate above 25°C
Operating and Storage Junction Temperature Range
2N718A Symbol 2N956 2N1711
VCER VCBO VEBO
Pd
50
75
7.0
500 2.86
800 4.57
pd TJ- Tst g
1.8 10.3
3.0 17.15
- 65 to + 200
Unit Vdc Vdc Vdc
mW
mW,'°C
Watts mW/°C
°C
2N718A JAN, JTX, JTXV AVAILABLE CASE 22, STYLE 1 TO-18 (TO-206AA) GENERAL PURPOSE
TRANSISTOR
NPN SILICON
2N718A: See 2N3019 for graphs.
ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted.!
Characteristic
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage dC = 100 mAdc, pulsed; Rbe == 10 ohms)
Collector-Base Breakdown Voltage (IC = 100 tiAdc, Ie = 0)
Emitter-Base Breakdown Voltage {IE = 100 fiAdc, lc = 0)
Collector Cutoff Current
(VCB = 60 Vdc, Ie = 0) (Vcb = 60 Vdc, El = 0, Ta = 150°C)
Emitter Cutoff Current (Vbe = 5....
